MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures
- 14 February 2013
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 31 (3), 03C105
- https://doi.org/10.1116/1.4792518
Abstract
GaAsBi/GaAs double quantum wells and double quantum well separate confinement heterostructures are grown at low temperatures using molecular beam epitaxy. Methods of achieving identical quantum wells in double quantum well structures without growth interruption are proposed and implemented. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that the samples have excellent structural and optical properties. The high optical quality of the samples is attributed to the surfactant effect of Bi throughout the low temperature growth of GaAs and AlGaAs layers. The proposed approach can be extended to grow laser diode structures with multiple quantum well separate confinement heterostructures containing more identical quantum wells.Keywords
This publication has 37 references indexed in Scilit:
- The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossingJournal of Applied Physics, 2012
- Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAsPhysical Review B, 2011
- Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum-Well StructuresJapanese Journal of Applied Physics, 2010
- Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBixLaser by Photo-PumpingApplied Physics Express, 2010
- light emitting diodesJournal of Crystal Growth, 2009
- Valence-band anticrossing in mismatched III-V semiconductor alloysPhysical Review B, 2007
- Giant Spin-Orbit Bowing inPhysical Review Letters, 2006
- GaBiAs: A material for optoelectronic terahertz devicesApplied Physics Letters, 2006
- Metastable GaAsBi Alloy Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 2003
- Molecular beam epitaxy growth of GaAs1−xBixApplied Physics Letters, 2003