Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum-Well Structures
- 1 July 2010
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 49 (7R)
- https://doi.org/10.1143/jjap.49.070211
Abstract
GaAs1-x Bi x /Al y Ga1-y As (0<xyin situ reflection high-energy electron diffraction suggested the layer-by-layer growth of GaAs1-x Bi x /Al y Ga1-y As MQWs. Clear satellite peaks attributed to periodical structures were observed in high-resolution X-ray diffraction measurements. The cross-sectional transmission microscopy images and secondary-ion mass spectrometry depth profile showed that GaAs1-x Bi x /Al y Ga1-y As MQWs with a smooth interface can be fabricated without distinct segregation.Keywords
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