Valence-band anticrossing in mismatched III-V semiconductor alloys
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- 16 January 2007
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 75 (4), 045203
- https://doi.org/10.1103/physrevb.75.045203
Abstract
We show that the band gap bowing trends observed in III-V alloys containing dilute concentrations of Sb or Bi can be explained within the framework of the valence-band anticrossing model. Hybridization of the extended -like states comprising the valence band of the host semiconductor with the close-lying localized -like states of Sb or Bi leads to a nonlinear shift of the valence-band edge and a reduction of the band gap. The two alloys and are explored in detail, and the results are extrapolated to additional systems.
Keywords
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