Molecular beam epitaxy growth of GaAs1−xBix
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- 7 April 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (14), 2245-2247
- https://doi.org/10.1063/1.1565499
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Overcoming limitations in semiconductor alloy designSuperlattices and Microstructures, 2001
- New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1998
- The stabilization of metastable phases by epitaxyJournal of Vacuum Science & Technology B, 1983