Deposition and optical studies of silicon carbide nitride thin films
- 17 July 2000
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 370 (1-2), 151-154
- https://doi.org/10.1016/s0040-6090(00)00956-1
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Phase formation and stability of N+ implanted SiC thin filmsJournal of Applied Physics, 1997
- Structural characterization of oxide layers thermally grown on 3C-SiC filmsJournal of Electronic Materials, 1995
- Dynamics of the nitrogen-bound excitons in 6HSiCPhysical Review B, 1994
- Preparation and characterization of reactively sputtered SiCxNy filmsThin Solid Films, 1990
- IR Spectroscopy and Structure of RF Magnetron Sputtered a‐SiC:H FilmsPhysica Status Solidi (b), 1987
- Infrared absorption and bonding in amorphous hydrogenated silicon-carbon alloysJournal of Physics D: Applied Physics, 1985
- Structural alterations in SiC as a result of Cr+ and N+ implantationNuclear Instruments and Methods in Physics Research, 1983
- Surface structure of silicon carbide irradiated with helium ions with monoenergy and continuous energy distributionsJournal of Applied Physics, 1982
- Raman and IR absorption spectroscopic studies on α, β, and amorphous Si3N4Journal of Non-Crystalline Solids, 1981
- FORMATION OF SiC IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1971