Advancing CMOS beyond the Si roadmap with Ge and III/V devices
- 1 December 2011
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 13.1.1-13.1.4
- https://doi.org/10.1109/iedm.2011.6131543
Abstract
Over the last years there has been lots of interest in the use of germanium and III-V compounds as potential replacements for silicon channels. Germanium with its high hole mobility has attracted lots of attention for its application in advanced pMOS devices. Indium gallium arsenide compounds, with their intrinsically superior electron mobility and high saturation velocity, are considered as a candidate for nMOS devices beyond 14 nm node technology.Keywords
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