Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode
- 21 February 2008
- journal article
- Published by Springer Science and Business Media LLC in Journal of Computational Electronics
- Vol. 7 (3), 380-383
- https://doi.org/10.1007/s10825-008-0217-3
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Numerical evaluation of the Lambert W function and application to generation of generalized Gaussian noise with exponent 1/2IEEE Transactions on Signal Processing, 2002
- A Unipolar "Field-Effect" TransistorProceedings of the IRE, 1952