Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum
- 25 July 2011
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 99 (4)
- https://doi.org/10.1063/1.3615784
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 InterfacesThe Journal of Physical Chemistry C, 2010
- Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)Microelectronic Engineering, 2009
- Adsorption of molecular oxygen on the reconstructed β2(2×4)-GaAs(001) surface: A first-principles studySurface Science, 2009
- Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$IEEE Electron Device Letters, 2007
- Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor ApplicationsIEEE Transactions on Nanotechnology, 2005
- GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer depositionApplied Physics Letters, 2003
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- Electronic structure of cleaved clean and oxygen-covered GaAs (110) surfacesPhysical Review B, 1977
- The GaAs inversion-type MIS transistorsSolid-State Electronics, 1974