Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates
- 21 August 2009
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 2 (9), 092101
- https://doi.org/10.1143/apex.2.092101
Abstract
Room-temperature continuous-wave operation of 520 nm InGaN-based green laser diodes on semi-polar {2021} GaN substrates was demonstrated. A threshold current of 95 mA corresponding to a threshold current density of 7.9 kA/cm2 and a threshold voltage of 9.4 V were achieved by improving the quality of epitaxial layers on {2021} GaN substrates using lattice-matched quaternary InAlGaN cladding layers and also by adopting a ridge-waveguide laser structure.Keywords
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