Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm

Abstract

We demonstrated nonpolar m-plane InGaN multiple quantum well laser diodes (LDs) under continuous-wave (cw) operation with a lasing wavelength of 499.8 nm, which is the longest reported for GaN-based LDs. A maximum optical output power of 15 mW was achieved, with the threshold current and the corresponding threshold current density (Jth) of 46 mA and 3.1 kA/cm2, respectively. The correlation between lasing wavelength shift and electrical input power (Pin) under cw operation was investigated using LDs of which reflectivity of front facet were varied from 70% to 97%. The lasing wavelength increased with increasing Pin with a slope of 4.56 and 4.34 nm/W for 70% and 97% mirror, respectively. The result suggested that the redshift due to self-heating is more predominant than the blueshift due to band filling above Jth even at near green region for nonpolar GaN-based LDs and reduction in Pin is indispensable to improve wavelength stabilization.