500 nm electrically driven InGaN based laser diodes
- 23 February 2009
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 94 (8), 081119
- https://doi.org/10.1063/1.3089573
Abstract
Based on recent improvements of growth of In-rich InGaN quantum wells with low defect density, we demonstrate current driven InGaN laser diodes at wavelengths as long as 500 nm. The laser structures are grown on c -plane GaN substrate and are processed as broad oxide-insulated stripe laser diodes. We discuss the impact of the piezoelectric field on the emission energy of long wavelength laser diodes for this growth orientation. The combination of low threshold current density of 8.2 kA / cm 2 with high slope efficiency of 650 mW/A enables high output powers up to several tens of milliwatts.Keywords
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