Radiation hardness of MOSFETs with N/sub 2/O-nitrided gate oxides
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (8), 1565-1567
- https://doi.org/10.1109/16.223726
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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