Radiation effects in nitrided oxides
- 1 June 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (6), 191-193
- https://doi.org/10.1109/edl.1983.25700
Abstract
Electron radiation effects on silicon dioxide films, before and after ammonia annealing (nitridation), have been studied. The most striking result is that the generation of radiation-induced interface states is nearly eliminated in the nitrided oxides.Keywords
This publication has 8 references indexed in Scilit:
- Thermal nitridation of silicon dioxide filmsJournal of Applied Physics, 1982
- Two-carrier nature of interface-state generation in hole trapping and radiation damageApplied Physics Letters, 1981
- Megarad-Resistant 10nm Gate DielectricsIEEE Transactions on Nuclear Science, 1981
- Properties of thin oxynitride gate dielectrics produced by thermal nitridation of silicon dioxidePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS CapacitorsIEEE Transactions on Nuclear Science, 1977
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962