Improvement of hot-electron-induced degradation in MOS capacitors by repeated irradiation-then-anneal treatments
- 1 February 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (2), 82-84
- https://doi.org/10.1109/55.46935
Abstract
Improvement of the SiO/sub 2//Si interface degradation due to hot-electron injections from silicon by repeated irradiation-then-anneal treatments is described. Each treatment includes an irradiation of Co-60 with a total dose of 10/sup 6/ rd (SiO/sub 2/) and an anneal in N/sub 2/ for 10 min successively. It is found that the sensitivity to hot-electron induced damage decreases gradually as the number of irradiation-then-anneal treatments increases. After three such treatments, the MOS capacitor shows excellent behavior in terms of its hardness to hot-electron-induced degradation.Keywords
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