Radiation-induced increase in the inversion layer mobility of reoxidized nitrided oxide MOSFETs
- 1 March 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (3), 677-684
- https://doi.org/10.1109/16.123494
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
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