A low-temperature and high-quality radical-assisted oxidation process utilizing a remote ultraviolet ozone source for high-performance SiGe/Si MOSFETs
- 19 May 2004
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 19 (7), 792-797
- https://doi.org/10.1088/0268-1242/19/7/002
Abstract
No abstract availableKeywords
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