Simulation and optimization of strained Si1−xGex buried channel p-MOSFETs
- 1 July 2000
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 44 (7), 1223-1228
- https://doi.org/10.1016/s0038-1101(00)00031-9
Abstract
No abstract availableKeywords
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