Low-frequency noise analysis of Si/SiGe channel pMOSFETs
- 31 December 2002
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 46 (12), 2281-2285
- https://doi.org/10.1016/s0038-1101(02)00231-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Hole confinement and its impact on low-frequency noise in SiGe pFETs on sapphirePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Analysis of Si/SiGe channel pMOSFETs for deep-submicron scalingSolid-State Electronics, 2002
- Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloysIEEE Transactions on Electron Devices, 1993
- Effective mass and mobility of holes in strained Si/sub 1-x/Ge/sub x/ layers onIEEE Transactions on Electron Devices, 1992
- A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistorsIEEE Transactions on Electron Devices, 1990
- Random telegraph noise of deep-submicrometer MOSFETsIEEE Electron Device Letters, 1990
- Model for 1/f noise in metal-oxide-semiconductor transistorsJournal of Applied Physics, 1981
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967