The effect of a temperature-varying sandwich buffer layer structure on GaN epitaxial layer grown on Si substrate
- 1 May 2013
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 370, 273-277
- https://doi.org/10.1016/j.jcrysgro.2012.10.041
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor depositionJournal of Vacuum Science & Technology B, 2010
- Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVDMicroelectronics Journal, 2008
- Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVDJournal of Physics D: Applied Physics, 2008
- MOCVD growth of thick AlN and AlGaN superlattice structures on Si substratesJournal of Crystal Growth, 2006
- Design of the low-temperature AlN interlayer for GaN grown on Si (111) substrateJournal of Crystal Growth, 2005
- GaN-based optoelectronics on silicon substratesMaterials Science and Engineering B, 2002
- Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in ThicknessJapanese Journal of Applied Physics, 2000
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaNJapanese Journal of Applied Physics, 1998
- Thermal stress in GaN epitaxial layers grown on sapphire substratesJournal of Applied Physics, 1995
- Comparison of dislocation densities of primary and secondary recrystallization grains of Si-FeActa Metallurgica, 1957