Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD
- 18 July 2008
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 41 (15)
- https://doi.org/10.1088/0022-3727/41/15/155317
Abstract
No abstract availableThis publication has 45 references indexed in Scilit:
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