Design of the low-temperature AlN interlayer for GaN grown on Si (111) substrate
- 1 April 2005
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 276 (3-4), 381-388
- https://doi.org/10.1016/j.jcrysgro.2004.11.419
Abstract
No abstract availableKeywords
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