Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD
- 31 December 2008
- journal article
- Published by Elsevier BV in Microelectronics Journal
- Vol. 39 (12), 1710-1713
- https://doi.org/10.1016/j.mejo.2008.01.042
Abstract
No abstract availableKeywords
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