Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy
- 1 January 2009
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 156 (11), H860-H868
- https://doi.org/10.1149/1.3222852
Abstract
We report on the growth of surface-bound, vertically oriented one-dimensional III/V nanostructures, specifically GaAs and InAs nanowires, on lattice-matched and -mismatched substrates by selective-area vapor-phase epitaxy. Control of nanowire features and growth directions is achieved by tuning the growth conditions. Grown nanostructures are characterized by scanning and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy.Keywords
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