AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
Open Access
- 25 October 2018
- journal article
- research article
- Published by MDPI AG in Micromachines
- Vol. 9 (11), 546
- https://doi.org/10.3390/mi9110546
Abstract
AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3–0.6 ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.
Keywords
Funding Information
- Narodowe Centrum Badań i Rozwoju (PBS1/A3/9/2012)
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