AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes
- 24 September 2010
- journal article
- conference paper
- Published by Elsevier BV in Microelectronics Reliability
- Vol. 51 (2), 195-200
- https://doi.org/10.1016/j.microrel.2010.08.014
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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