Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
- 1 July 2013
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 6 (7), 075504
- https://doi.org/10.7567/apex.6.075504
Abstract
Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown GaN seed crystals is described. The initial growth conditions for HVPE are determined and applied for further bulk growth. Smooth GaN layers up to 1.1 mm thick and of excellent crystalline quality, without cracks, and with low dislocation density are obtained. Preparation of the free-standing HVPE-GaN crystal by slicing and structural and optical quality of the resulting wafer are presented.Keywords
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