Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
- 23 April 2013
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 52 (5R)
- https://doi.org/10.7567/jjap.52.050001
Abstract
No abstract availableKeywords
This publication has 53 references indexed in Scilit:
- Subhistories of the light emitting diodeIEEE Transactions on Electron Devices, 1976
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution CoefficientsPhysical Review B, 1973
- Electroluminescence in GaNJournal of Luminescence, 1971
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969
- Dissociation pressures of GaAs, GaP and InP and the nature of III–V meltsJournal of Physics and Chemistry of Solids, 1963
- COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONSApplied Physics Letters, 1962
- Über neue halbleitende VerbindungenZeitschrift für Naturforschung A, 1952
- Nitrogen Compounds of Gallium. IIIThe Journal of Physical Chemistry, 1932
- Über neue Metall‐Stickstoff‐Verbindungen und ihre Stabilität an der Hand des periodischen SystemsEuropean Journal of Inorganic Chemistry, 1910
- Über AluminiumnitridZeitschrift für anorganische und allgemeine Chemie, 1907