Effect of C- and Fe-doped GaN buffer on AlGaN/GaN high electron mobility transistor performance on GaN substrate using side-gate modulation
- 16 March 2021
- journal article
- research article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 60 (SB), SBBD17
- https://doi.org/10.35848/1347-4065/abe999
Abstract
Side-gate (SG) modulation on AlGaN/GaN high electron mobility transistor performance with C-doped GaN buffer (C-GaN) and Fe-doped GaN buffer (Fe-GaN) layer on GaN substrate is experimentally investigated. The SG contacts are located 6 μm from either side of the device mesa, and etched near the channel layer. SG modulation is done by two methods, that is, applying a fixed side-gate voltage (VSG) bias while the DC characteristics are measured, and bidirectional dual sweeping the applied VSG while measuring the on-state drain current (ID). At fixed high negative VSG, a drastic decrease in transconductance and ID is evident for C-GaN as compared to Fe-GaN. Moreover, evidence of larger memory effect in C-GaN, is demonstrated as shown in the ID hysteresis feature using bidirectional dual-sweep VSG measurements. The ID decreased at high negative VSG is inferred to be due to the field modulation caused by the SG.Keywords
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