Power Gallium Nitride Technology: The Need for Efficient Power Conversion

Abstract

The biggest motivation and driver for semiconductor power device innovation is improved efficiency in power conversion. Power gallium nitride (GaN) technology shows the greatest performance benefits against other incumbent technologies, including silicon (Si) technology. A reduction in power losses is the key challenge industries are facing. Pressure from society and government legislation for reduced CO2 emission are all trending toward more efficient power conversion and electrification. Automotive electrification, telecom infrastructure, server storage, and industrial automation using power electronics are the biggest trends in the technology sector. GaN field-effect transistors (FETs) can enable us to achieve the best efficiency with lower system costs while making systems lighter, smaller, and cooler. Electrification in the automotive sector can be the biggest beneficiary of this new power GaN FET technology.