High-performance multilayer thin-film encapsulation for organic micro-displays by inserting in situ plasma oxidized Al layers between SiOx layers
- 1 June 2020
- journal article
- research article
- Published by IOP Publishing in Applied Physics Express
- Vol. 13 (6), 065507
- https://doi.org/10.35848/1882-0786/ab92ef
Abstract
Multilayer thin-film encapsulation plays an important role in Si-based organic micro-displays. In this letter, we demonstrate an efficient and low-process-temperature approach to fabricate high-performance barrier films by inserting in situ plasma oxidized Al layers between SiOx encapsulation layers. Calcium degradation tests show that the water vapor transmission rate of the SiOx/AlOx multilayer barrier film is 2.23 x 10(-5) g m(-2 )day(-1) under the conditions of 25 degrees C and 70% relative humidity after in situ plasma oxidation treatment for 20 min, which is a reduction of two orders of magnitude compared with single-layer SiOx barrier films.Funding Information
- National Natural Science Foundation of China (61675089)
This publication has 25 references indexed in Scilit:
- A flexible moisture barrier comprised of a SiO2-embedded organic–inorganic hybrid nanocomposite and Al2O3 for thin-film encapsulation of OLEDsOrganic Electronics, 2013
- Thermally Evaporated SiO Thin Films As a Versatile Interlayer for Plasma-Based OLED PassivationACS Applied Materials & Interfaces, 2012
- Embedded layer of Ag nanoparticles prepared by a combined PECVD/PVD process producing SiOxCy–Ag nanocomposite thin filmsNanotechnology, 2011
- Al2O3/ZrO2 Nanolaminates as Ultrahigh Gas‐Diffusion Barriers—A Strategy for Reliable Encapsulation of Organic ElectronicsAdvanced Materials, 2009
- Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrierThin Solid Films, 2006
- Properties of SiOxNy thin film deposited by low temperature plasma enhanced chemical vapor deposition using TEOS–NH3–O2–N2 gas mixturesSurface and Coatings Technology, 2005
- Water and oxygen permeation of silicon nitride films prepared by plasma-enhanced chemical vapor depositionSurface and Coatings Technology, 2005
- On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy filmsThin Solid Films, 2001
- Composition, oxidation, and optical properties of fluorinated silicon nitride film by inductively coupled plasma enhanced chemical vapor depositionJournal of Materials Research, 1999
- Achieving full-color organic light-emitting devices for lightweight, flat-panel displaysIEEE Transactions on Electron Devices, 1997