Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier
- 6 September 2006
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 515 (3), 917-921
- https://doi.org/10.1016/j.tsf.2006.07.056
Abstract
No abstract availableKeywords
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