Thermally Evaporated SiO Thin Films As a Versatile Interlayer for Plasma-Based OLED Passivation
- 8 June 2012
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 4 (6), 3247-3253
- https://doi.org/10.1021/am300600s
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- The encapsulation of an organic light-emitting diode using organic–inorganic hybrid materials and MgOOrganic Electronics, 2011
- Reliable thin film encapsulation for organic light emitting diodes grown by low-temperature atomic layer depositionApplied Physics Letters, 2009
- Al2O3/ZrO2 Nanolaminates as Ultrahigh Gas‐Diffusion Barriers—A Strategy for Reliable Encapsulation of Organic ElectronicsAdvanced Materials, 2009
- Molecular Layer Deposition of Alucone Polymer Films Using Trimethylaluminum and Ethylene GlycolChemistry of Materials, 2008
- The initial mechanisms of Al2O3 atomic layer deposition on OH/Si(100)-2×1 surface by tri-methylaluminum and waterChemical Physics Letters, 2006
- Ultrathin Film Encapsulation of an OLED by ALDElectrochemical and Solid-State Letters, 2005
- Thin-Film Permeation-Barrier Technology for Flexible Organic Light-Emitting DevicesIEEE Journal of Selected Topics in Quantum Electronics, 2004
- Ultra barrier flexible substrates for flat panel displaysDisplays, 2001
- Reliability and degradation of organic light emitting devicesApplied Physics Letters, 1994
- Light-emitting diodes based on conjugated polymersNature, 1990