Growth and characterization of heteroepitaxial ZnO thin films by organometallic chemical vapor deposition
- 1 January 1988
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 86 (1-4), 248-251
- https://doi.org/10.1016/0022-0248(90)90724-y
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The use of heterocyclic compounds in the organometallic chemical vapour deposition of epitaxial ZnS, ZnSe and ZnOJournal of Crystal Growth, 1984
- Metalorganic chemical vapor deposition of oriented ZnO films over large areasApplied Physics Letters, 1983
- Properties of zinc oxide films prepared by the oxidation of diethyl zincJournal of Applied Physics, 1981
- Highly oriented zinc oxide films grown by the oxidation of diethylzincApplied Physics Letters, 1980
- Growth of Epitaxial ZnO Thin Films by Organometallic Chemical Vapor DepositionJournal of the Electrochemical Society, 1980
- Ultraviolet luminescence of epitaxial zinc oxide films subjected to one- and two-photon excitationSoviet Journal of Quantum Electronics, 1978
- Band-edge emission in ZnOJournal of Luminescence, 1976
- Electrical transport properties of Zn doped ZnOJournal of Solid State Chemistry, 1975
- Chemical Vapor Deposition of Silicate Glasses for Use with Silicon DevicesJournal of the Electrochemical Society, 1970