Highly oriented zinc oxide films grown by the oxidation of diethylzinc
- 1 September 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (5), 449-451
- https://doi.org/10.1063/1.91960
Abstract
Zinc oxide films, with a high degree of c‐axis orientation, have been grown on glass substrates by a chemical vapor deposition process involving the oxidation of diethylzinc. Film growth was carried out over the 200–500 °C temperature range; however, the maximum crystal orientation was found to occur with substrate temperatures between 325 and 400 °C. The effect of different substrate materials on crystallographic orientation is also described in this letter.Keywords
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