InAs self-assembled quantum-dot lasers grown on (100) InP
- 13 May 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (19), 3629-3631
- https://doi.org/10.1063/1.1479200
Abstract
Five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP are grown on (100) InP substrate to form a laser diode. The QD ensemble has a density of and emits light at ∼1.6 μm at 77 K. Lasing wavelength and threshold current density can be shifted by changing the cavity length of the laser diode and the latter reaches a value as low as 49 A/cm2 at 77 K for a gate size of Temperature dependence of the threshold current is observed implying the presence of thermionic emission increasing with temperature.
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