Low-threshold oxide-confined 1.3-μm quantum-dot laser
- 1 March 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 12 (3), 230-232
- https://doi.org/10.1109/68.826897
Abstract
Data are presented on low threshold, 1.3-μm oxide-confined InGaAs-GaAs quantum dot lasers. A very low continuous-wave threshold current of 1.2 mA with a threshold current density of 28 A/cm 2 is achieved with p-up mounting at room temperature. For slightly larger devices the continuous-wave threshold current density is as low as 19 A/cm 2 .Keywords
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