Effects of Surface Oxidation of AlGaN on DC Characteristics of AlGaN/GaN High-Electron-Mobility Transistors
- 1 February 2009
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 48 (2R)
- https://doi.org/10.1143/jjap.48.020203
Abstract
No abstract availableKeywords
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