Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifier
- 1 July 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (7R)
- https://doi.org/10.1143/jjap.44.4896
Abstract
A state-of-the-art highly reliable 250 W AlGaN/GaN high electron mobility transistor (HEMT) push-pull transmitter amplifier operated at a drain bias voltage of 50 V is described. The amplifier, combined with a digital predistortion (DPD) system, also achieved an adjacent channel leakage power ratio (ACLR) of less than -50 dBc for 4-carrier wideband code division multiple access (W-CDMA) signals with a drain supply voltage of 50 V. I also demonstrate its stable operation under RF stress testing for 1000 h at a drain bias voltage of 60 V. Stable gate-leakage current for high-temperature operation was verified. Device fabrications on 4 inch sapphire and 3 inch semi-insulating (S.I.) SiC substrates were also addressed. These performances clarify that an AlGaN/GaN HEMTs amplifier is suitable for 3G W-CDMA systems.Keywords
This publication has 14 references indexed in Scilit:
- 9.4-W/mm Power Density AlGaN–GaN HEMTs on Free-Standing GaN SubstratesIEEE Electron Device Letters, 2004
- Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processesApplied Surface Science, 2004
- 12 W/mm AlGaN–GaN HFETs on Silicon SubstratesIEEE Electron Device Letters, 2004
- 30-W/mm GaN HEMTs by Field Plate OptimizationIEEE Electron Device Letters, 2004
- Power and Linearity Characteristics of GaN MISFETs on Sapphire SubstrateIEEE Electron Device Letters, 2004
- Thermal Stability of Electrical Properties in AlGaN/GaN HeterostructuresJapanese Journal of Applied Physics, 2004
- Transient characteristics of gan-based heterostructure field-effect transistorsIEEE Transactions on Microwave Theory and Techniques, 2003
- Trapping effects and microwave power performance in AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETsIEEE Transactions on Electron Devices, 2001
- Fabrication and characterisation of enhanced barrier AlGaN/GaN HFETElectronics Letters, 1999