A 25 Gbps silicon microring modulator based on an interleaved junction
- 8 November 2012
- journal article
- research article
- Published by Optica Publishing Group in Optics Express
- Vol. 20 (24), 26411-26423
- https://doi.org/10.1364/oe.20.026411
Abstract
A silicon microring modulator utilizing an interleaved p-n junction phase shifter with a VπL of 0.76 V-cm and a minimum off-resonance insertion loss of less than 0.2 dB is demonstrated. The modulator operates at 25 Gbps at a drive voltage of 1.6 V and 2-3 dB excess optical insertion loss, conditions which correspond to a power consumption of 471 fJ/bit. Eye diagrams are characterized at up to 40 Gbps, and transmission is demonstrated across more than 10 km of single-mode fiber with minimal signal degradation.This publication has 23 references indexed in Scilit:
- Ultralow drive voltage silicon traveling-wave modulatorOptics Express, 2012
- 40 Gbit/s low-loss silicon optical modulator based on a pipin diodeOptics Express, 2012
- Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator.Optics Express, 2012
- High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulatorsOptics Express, 2012
- Silicon CMOS-integrated nano-photonics for computer and data communications beyond 100GIEEE Communications Magazine, 2012
- Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s.Optics Express, 2011
- 40 Gb/s silicon photonics modulator for TE and TM polarisationsOptics Express, 2011
- High contrast 40Gbit/s optical modulation in siliconOptics Express, 2011
- 40 Gbit/s silicon optical modulator for high-speed applicationsElectronics Letters, 2007
- Micrometre-scale silicon electro-optic modulatorNature, 2005