40 Gbit/s silicon optical modulator for high-speed applications
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- 1 January 2007
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 43 (22), 1196-1197
- https://doi.org/10.1049/el:20072253
Abstract
A high-speed silicon optical modulator based on the free carrier plasma dispersion effect is presented. It is based on carrier depletion of a pn diode embedded inside a silicon-on-insulator waveguide. To achieve high-speed performance, a travelling-wave design is used to allow co-propagation of the electrical and optical signals along the length of the device. The resulting modulator has a 3 dB bandwidth of ∼30 GHz and can transmit data up to 40 Gbit/s.Keywords
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