40 Gb/s silicon photonics modulator for TE and TM polarisations
- 2 June 2011
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 19 (12), 11804-11814
- https://doi.org/10.1364/oe.19.011804
Abstract
A key device in future high speed short reach interconnect technology will be the optical modulator. These devices, in silicon, have experienced dramatic improvements over the last 6 years and the modulation bandwidth has increased from a few tens of MHz to over 30 GHz. However, the demands of optical interconnects are significant. Here we describe an approach based on a self-aligned wrap around p-n junction structure embedded in a silicon waveguide that can produce high-speed optical phase modulation, whilst at the same time, capable of a high extinction ratio. An all-silicon optical modulator using a CMOS compatible fabrication process with a data rate of 40 Gb/s and extinction ratio up to approximately 6.5 dB for TE and TM polarisations is demonstrated. This technology is not only compatible with conventional complementary MOS (CMOS) processing, but is also intended to simplify and improve the reliability of, the fabrication process.This publication has 9 references indexed in Scilit:
- High speed silicon optical modulator with self aligned fabrication processOptics Express, 2010
- High speed carrier-depletion modulators with 14V-cm V_πL integrated on 025μm silicon-on-insulator waveguidesOptics Express, 2010
- Low V_pp, ultralow-energy, compact, high-speed silicon electro-optic modulatorOptics Express, 2009
- High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diodeOptics Express, 2009
- High-modulation efficiency silicon Mach-Zehnder optical modulator based on carrier depletion in a PN DiodeOptics Express, 2009
- Device Requirements for Optical Interconnects to Silicon ChipsProceedings of the IEEE, 2009
- High-speed optical modulation based on carrier depletion in a silicon waveguideOptics Express, 2007
- CMOS Photonics for High-Speed InterconnectsIEEE Micro, 2006
- Optical modulation by carrier depletion in a silicon PIN diode.Optics Express, 2006