Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN
- 22 June 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (25), 3317-3319
- https://doi.org/10.1063/1.121636
Abstract
In this work indiumtin oxide (ITO) films were prepared using electron beam evaporation to form Schottky contacts on n- type GaNfilms. The thermal stability of ITO on n- type GaN was also investigated by annealing the samples at various temperatures. In addition, current–voltage (I–V) measurements were taken to deduce the Schottky barrier heights. Owing to the large series resistance, the Norde method was used to plot the F(V)–V curves and the effective Schottky barrier heights were determined as well. The effective Schottky barrier heights were 0.68, 0.88, 0.94, and 0.95 eV for nonannealed, 400, 500, and 600 °C annealed samples, respectively. Results presented herein indicate that an increase of the barrier heights may be attributed to the formation of an interfacial layer at the ITO/GaN interface after annealing.This publication has 20 references indexed in Scilit:
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