A new metallization scheme has been developed for obtaining very low Ohmic contact to n‐GaN. The metallization technique involves the deposition of a composite metal layer Ti/Al/Ni/Au (150 Å/2200 Å/400 Å/500 Å) on n‐GaN preceded by a reactive ion etching (RIE) process which most likely renders the surface highly n type. Of the several attempts and with annealing at 900 °C for 30 s, contacts with specific resistivity values of ρs=8.9×10−8 Ω cm2 or lower for a doping level of 4×1017 cm−3 were obtained. The physical mechanism underlying the realization of such a low resistivity is elucidated.