Characterisation of Pd Schottky barrier on n-type GaN
- 1 January 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (1), 68-70
- https://doi.org/10.1049/el:19960029
Abstract
The electrical characteristics of Pd Schottky barrier to n-type GaN grown by MOCVD were investigated. The effective barrier height was found to be 0.94 and 1.07 eV from I-V and C-V measurements, respectively. The ideality factor was ~1.04. The effective Richardson constant was determined to be ~3.24 Acm-2K-2 using the modified Norde plot. These values were also compared to Au Schottky contacts.Keywords
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