Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors
- 14 April 2014
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 104 (15), 153510
- https://doi.org/10.1063/1.4871802
Abstract
The mechanism of both reverse and forward gate leakage currents in Al2O3/Al0.55Ga0.45N/GaN structures was studied in this Letter by temperature-dependent current-voltage measurement. Poole–Frenkel (PF) emission, an oxygen vacancy-assisted process, was deduced as the dominant mechanism at high-temperatures (>388 K), and the leakage current at mid-temperatures (<388 K) were found greatly impacted by temperature-independent tunneling current. The reverse PF mission current in low-field, mid-field, and high-field region were related to trap states with activation energy of 0.41 eV, 0.49 eV, and 0.71 eV, respectively, and the activation energy of trap states for forward PF emission current was derived as 0.65 eV.Funding Information
- NNSFC (61334002)
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