AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers
- 19 December 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 27 (1), 16-18
- https://doi.org/10.1109/led.2005.860884
Abstract
Al/sub 0.4/Ga/sub 0.6/N/GaN heterostructure field-effect transistors (HFETs) with an AlGaN barrier thickness of 8 nm and a gate length (L/sub G/) of 0.06-0.2 /spl mu/m were fabricated on a sapphire substrate. We employed two novel techniques, which were thin, high-Al-composition AlGaN barrier layers and SiN gate-insulating, passivation layers formed by catalytic chemical vapor deposition, to enhance high-frequency device characteristics by suppressing the short channel effect. The HFETs with L/sub G/=0.06-0.2 /spl mu/m had a maximum drain current density of 1.17-1.24 A/mm at a gate bias of +1.0 V and a peak extrinsic transconductance of 305-417 mS/mm. The current-gain cutoff frequency (f/sub T/) was 163 GHz, which is the highest value to have been reported for GaN HFETs. The maximum oscillation frequency (f/sub max/) was also high, and its value derived from the maximum stable gain or unilateral gain was 192 or 163 GHz, respectively.Keywords
This publication has 6 references indexed in Scilit:
- AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire SubstratesJapanese Journal of Applied Physics, 2005
- Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier LayersIEEE Electron Device Letters, 2005
- Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam EpitaxyJapanese Journal of Applied Physics, 2004
- Fabrication of sub‐50‐nm‐gate i‐AlGaN/GaN HEMTs on sapphirephysica status solidi (c), 2003
- AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHzIEEE Electron Device Letters, 2002
- GaN/AlGaN high electron mobility transistors with f of 110 GHzElectronics Letters, 2000