Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures
- 6 April 2009
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 94 (14), 142106
- https://doi.org/10.1063/1.3115805
Abstract
In order to determine the reverse-bias leakage current mechanisms in Schottky diodes on Al 0.83 In 0.17 N / AlN / GaN heterostructures, the temperature-dependent current-voltage measurements were performed in the temperature range of 250–375 K. In this temperature range, the leakage current was found to be in agreement with the predicted characteristics, which is based on the Frenkel–Poole emission model. The analysis of the reverse current-voltage characteristics dictates that the main process in leakage current flow is the emission of electrons from a trapped state near the metal-semiconductor interface into a continuum of states which associated with each conductive dislocation.Keywords
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