Improved reliability of magnetic field programmable gate arrays through the use of memristive tunnel junctions
- 1 November 2011
- journal article
- other
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 110 (9), 096105
- https://doi.org/10.1063/1.3660521
Abstract
Since the recent successful implementation of the long-hypothesized memristor, its use in neuronal computing and in the reproduction of biological neural networks has gained increasing attention. In addition to the development of these new applications, the growing number of devices with memristive properties is promising to improve already established technologies. Herein, we use the recently reported memristance in magnesium-oxide-based magnetic tunnel junctions to improve the error tolerance in magnetic random access memory and magnetic field programmable logic arrays.Keywords
This publication has 26 references indexed in Scilit:
- The mechanism of electroforming of metal oxide memristive switchesNanotechnology, 2009
- Electroforming, magnetic and resistive switching in MgO-based tunnel junctionsJournal of Physics D: Applied Physics, 2009
- Electrical switching in Fe∕Cr∕MgO∕Fe magnetic tunnel junctionsApplied Physics Letters, 2008
- The missing memristor foundNature, 2008
- Nanoionics-based resistive switching memoriesNature Materials, 2007
- MgO-based tunnel junction material for high-speed toggle magnetic random access memoryIEEE Transactions on Magnetics, 2006
- Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctionsNature Materials, 2004
- Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriersNature Materials, 2004
- MagnetoelectronicsScience, 1998
- Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel JunctionsPhysical Review Letters, 1995