MgO-based tunnel junction material for high-speed toggle magnetic random access memory
- 1 August 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 42 (8), 1935-1939
- https://doi.org/10.1109/tmag.2006.877743
Abstract
No abstract availableKeywords
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