Electroforming, magnetic and resistive switching in MgO-based tunnel junctions
- 27 April 2009
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 42 (10)
- https://doi.org/10.1088/0022-3727/42/10/105407
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperatureApplied Physics Letters, 2008
- Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(0 0 1) barrierJournal of Physics D: Applied Physics, 2007
- Three-state memory combining resistive and magnetic switching using tunnel junctionsJournal of Physics D: Applied Physics, 2007
- Magnetic tunnel junctionsMaterials Today, 2006
- Nanoscopic processes of current-induced switching in thin tunnel junctionsIEEE Transactions on Nanotechnology, 2006
- Electromigration in thin tunnel junctions with ferromagnetic/nonmagnetic electrodes: Nanoconstrictions, local heating, and direct and wind forcesPhysical Review B, 2005
- Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctionsNature Materials, 2004
- Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriersNature Materials, 2004
- Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junctionPhysical Review B, 2001
- Spin-dependent tunneling conductance ofsandwichesPhysical Review B, 2001